Our new research paper has been published in Journal of Crystal Growth. This is the latest report on the evaluation
technique for crystal defects in power device SiC wafers by polarised light observation and the result of the joint
research with Associate Professor Shunta Harada ，Nagoya University.

Journal：Journal of Crystal Growth
Paper Title：Advances in defect characterization techniques using polarized light observation in SiC wafers for power devices
Author：Shunta Harada and Kenta Murayama
URL: https://doi.org/10.1016/j.jcrysgro.2024.127982
※The paper is open access.

Our joint research was supported by the NEDO project to support young researchers (JPNP20004).