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Mipox provides a unique edge and notch polishing service using our proprietary polishing film products and dedicated edge/notch polishing equipment.
Mipox flexibly supports various semiconductor wafers (SEMI standard sizes), special format size wafers, glass substrates, and bonded composite wafers. We have extensive experience with challenging materials including SiC, GaN, diamond, oxide materials, and various ceramic materials.
Cutting the ingot.
Diameter dimension adjustment. Chamfering, damage prevention.
Grinding wafer surfaces to adjust thickness. Remove waviness.
Remove altered layer. Create wafers with desired electrical characteristics.
Mirror-finish edge and notch areas.
Remove surface irregularities, flatten surface.
Leveraging the film's unique characteristics of "flexibility" and "continuous abrasive replacement", we have independently developed a high-efficiency process that achieves both low damage and high polishing rates, expanding this into our polishing service. By selecting the appropriate polishing film, we can easily process challenging materials like SiC and GaN.
Moreover, our polishing service is utilized not only in wafer manufacturing processes but also in semiconductor "post-processing" applications. Particularly, our uniquely developed "Edge Trimming Process" is a key application designed to prevent wafer damage during backgrinding (BG), with the ability to simultaneously remove the wafer and BG tape. (Japanese Patent No. 4463326)
Mipox's edge polishing service (film-based edge polishing) can handle challenging materials that are difficult to process using grinding wheel or slurry polishing methods. We can finish edge shapes and edge/notch surface roughness to your desired shape and precision.
Can modify edge shapes through equipment settings (recipes). Unlike typical grinding methods, no need to prepare specific grinding wheels for each edge shape, enabling flexible response to low-volume, diverse edge shape requirements.
By changing polishing film type, edge/notch surface roughness can be easily modified and adjusted.
Capable of achieving mirror finish down to 10nm through repeated polishing.
The mirror surface of less than 10 nm is possible by repeated polishing.
Significantly Reduced Chipping
Dramatically fewer micro-cracks compared to grinding methods. Suitable for delicate template substrates like GaNonSi.
Chemical-Free Process
No liquid chemicals (acids, alkalis) used during edge polishing, eliminating wafer cleaning and waste liquid processing steps.
High Efficiency for Difficult Materials
Achieves 3-5 times higher chamfering processing efficiency for materials like SiC and GaN compared to grinding methods.
Material Versatility
Can smoothly polish plastic and metal materials (Cu film, Au film) that grinding methods struggle with.
Mipox's edge trimming service improves yield in semiconductor wafer backgrinding processes.
It can process edge areas with various resin or metal films (Cu, Au) without interference. Additionally, it can simultaneously trim the backgrinding tape and wafer, allowing processing after tape application without disrupting existing workflows.
The edge/notch polishing service minimizes wafer diameter reduction while efficiently removing unwanted films and defects. This is particularly effective for wafer reclaiming markets, including:
Edge (notch) before polishing
Edge roughness during etching process
State after polishing film type edge
(after rough polishing process)
Edge (notch) before polishing
Abnormal crystal growth at the edge during epitaxial film growth
State after polishing film edge
(after finish polishing)
The polishing method effectively resolves resin (adhesive) attachment issues during:
Unlike grinding or slurry methods, the film-based approach is less susceptible to material-induced clogging, enabling efficient resin removal.
Before edge trimming process
After edge trimming process
Mipox's edge and notch polishing service (polishing film edge polishing) is widely used for chamfering compound semiconductor wafers such as SiC and GaN, as it is recognised for its low damage to the wafer compared to other methods.
Recognized for low-damage processing, the method is widely used for:
-Chamfering SiC and GaN semiconductor wafers
-Complementing water-assisted laser cutting techniques
-Particularly effective for 8-inch SiC and ceramic material wafer fabrication
Roughness of oxide semiconductors after polishing
Edge observation of oxide semiconductors: perfect mirror surface achieved
Top edge polishing (terrace formation polishing) using our polishing film method reduces the load on the bulk and epitaxial layers and removes defects at the edges. It is even possible to achieve a mirror surface. This is one of the only applications of the polishing film method that cannot be handled by grinding wheels or slurry polishing methods.
Specialized for complex template wafers like GaNonSi, this process:
-Removes edge defects
-Minimizes damage to bulk and epitaxial layers
-Achieves mirror-like surface finish
-Unique film-based polishing methods
Mipox's edge polishing processing service (polishing film-type edge polishing process) is also available for chip-shaped (square) wafers used in research and development applications and for special small-diameter wafers (half-inch size) of 1 inch or less in diameter.
Supports:
-Chip-shaped (rectangular) wafers
-Small diameter wafers (1-inch or less)
-Preventing edge damage during processing
The edge that protrudes due to misalignment caused when bonding two wafers of different materials is intensively polished to restore the wafers to an almost perfect circular shape.
Can correct misalignments during dissimilar material wafer bonding by:
-Selectively polishing protruding edges
-Restoring near-circular wafer shape
-Maintaining underlying wafer structure
A wafer that has been misaligned during the bonding process (before edge polishing)
Wafer with misalignment corrected in the bonding process (after Mipox edge polishing)
Mipox has developed a unique chamfering application using a polishing film method for large diameter 8-inch SiC wafers, which are gaining attention as a key material for next generation power semiconductors.
his process has been very well received as a rational method that achieves highly efficient and stable chamfering for SiC, a difficult-to-machine material. The offering includes both polishing processing services and specialized notch/edge chamfering equipment (polishing equipment) with specifications dedicated to 8-inch SiC wafers.
Chamfering using the abrasive film method offers better cost performance than other methods, especially for difficult-to-machine materials.
A comparison of chamfering costs for single crystal 8-inch wafer applications (chamfering by abrasive film and grinding wheel method) is shown in a separate graph.
The abrasive film method enables chamfering to be carried out at a lower cost. In particular, the chamfering of notches is an overwhelmingly low cost, approximately 1/5 that of the grinding wheel method. In addition, the abrasive film method is also superior in terms of uptime, as it minimises equipment downtime, such as when changing abrasive materials.
Film-based polishing offers superior cost performance, especially for challenging materials:
-Significantly lower cost compared to grinding methods
-Approximately 1/5 the cost for notch area processing
-Reduced equipment downtime
-Higher operational efficiency
Mipox, the polishing professional, will propose the best polishing solutions, materials, and tools to meet your needs.
Please feel free to contact us.